Datasheet Details
| Part number | STP7NB60FP |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 115.50 KB |
| Description | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| Download | STP7NB60FP Download (PDF) |
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Download the STP7NB60FP datasheet PDF. This datasheet also includes the STP7NB60 variant, as both parts are published together in a single manufacturer document.
| Part number | STP7NB60FP |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 115.50 KB |
| Description | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| Download | STP7NB60FP Download (PDF) |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P t ot dv/dt( 1) V ISO T stg Tj March 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max.
STP7NB60 STP7NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STP7NB60 STP7NB60F P s s s s s V DSS 600 V 600 V R DS(on) < 1.2 Ω < 1.2 Ω ID 7.2 A 4.1 A TYPICAL RDS(on) = 1.
| Part Number | Description |
|---|---|
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| STP7NB40 | N-CHANNEL MOSFET |
| STP7NB80 | N-CHANNEL MOSFET |
| STP7N52DK3 | Power MOSFETs |
| STP7N80Z | N-Channel MOSFET |
| STP7NA40 | N-CHANNEL MOSFET |
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| STP7NA60 | N-CHANNEL MOSFET |
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