STMicroelectronics STP7NK40Z
This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH.STP7NK40Z Specifications
- Package : TO-220
- Mount Type : Through Hole
- Current Rating : 5.4A
- Breakdown Voltage : 400V
- Threshold Voltage : 3.75V
- RDS(on) Max : 1Ω
- Input Capacitance : 535pF
- Terminals : 3
- Reverse Recovery Time : 220ns
- Rise Time : 15ns
- Fall Time : 12ns
- Max Power Dissipation : 70W
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STP7NK40Z |
|---|---|
| Datasheet | STP7NK40Z Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
TAB TO-220 1 23 D(2, TAB) Order code VDS STP7NK40Z 400 V● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitance
● Zener-protected
APPLICATIONS
RDS(on) max. 1Ω ID 5.4 A● Switching applications G(1)
DESCRIPTION
In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Product status link STP7NK40Z Product summary Order code STP7NK40Z Marking P7NK40Z Package TO-220 Packing Tube DS14318 - Rev 1 - May 2023 For further information contact your local STMicroelectronics sales office. STP7NK40Z Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VDGR Drain-gate voltage (RGS = 20 kΩ) VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ESD Gate-source, human body model (R = 1.5 kΩ, C = 100 pF) dv/dt(2) Peak diode recovery voltage slope Tstg Storage temperature range TJ Operating junction temperature range 1.
