Download STP7NM50N Datasheet PDF
STP7NM50N datasheet preview
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STP7NM50N Key Features

  • 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
  • Switching application
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  • STD7NM50N-1
  • STF7NM50N
  • STP7NM50N
  • 3 Electrical characteristics
  • 10 Packaging mechanical data
  • 15 Revision history
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STP7NM50N Description

This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. 4 2.1 (curves) ............................