This series of devices implements second generation MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
Key Features
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Type
VDSS (@Tjmax) 650 V 650 V 650 V 650 V
RDS(on) max.
Full PDF Text Transcription for STP8NM60N (Reference)
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STP8NM60N. For precise diagrams, and layout, please refer to the original PDF.
STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET Features www.DataShe...
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PAK - DPAK second generation MDmesh™ Power MOSFET Features www.DataSheet4U.com Type VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max <0.65 Ω <0.65 Ω <0.65 Ω <0.65 Ω ID 3 3 2 1 1 2 STD8NM60N STD8NM60N-1 STF8NM60N STP8NM60N 7A 7A 7 A(1) 7A IPAK TO-220 1. Limited only by maximum temperature allowed ■ ■ ■ 3 1 1 3 2 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK TO-220FP Application ■ Figure 1. Internal schematic diagram Switching applications Description This series of devices implements second generation MDmesh™ technology.
STP8NM60N Datasheet
