900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

STP9NM60 Datasheet

N-channel Power MOSFET

No Preview Available !

STP9NM60
STD9NM60 - STD9NM60-1
N-CHANNEL 600V - 0.55- 8.3A TO-220/DPAK/IPAK
Zener-Protected MDmesh™Power MOSFET
TARGET DATA
TYPE
VDSS RDS(on)
ID
Pw
STP9NM60
STD9NM60
STD9NM60-1
600 V
600 V
600 V
< 0.60
< 0.60
< 0.60
8.3 A
8.3 A
8.3 A
100 W
100 W
100 W
s TYPICAL RDS(on) = 0.55
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s IMPROVED ESD CAPABILITY
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s LOW GATE INPUT RESISTANCE
s TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
TO-220
IPAK
3
2
1
3
1
DPAK
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition’s products.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
The MDmesh™ family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ORDERING INFORMATION
SALES TYPE
STP9NM60
STD9NM60T4
STD9NM60-1
MARKING
P9NM60
D9NM60
D9NM60
June 2003
PACKAGE
TO-220
DPAK
IPAK
PACKAGING
TUBE
TAPE & REEL
TUBE
1/9


STMicroelectronics Electronic Components Datasheet

STP9NM60 Datasheet

N-channel Power MOSFET

No Preview Available !

STP9NM60 / STD9NM60 / STD9NM60-1
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate-source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 7A, di/dt 400 µA, VDD V(BR)DSS, Tj TJMAX.
Value
600
600
± 30
8.3
5.2
33.2
100
0.8
15
-65 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
62.5
1.25
300
DPAK
IPAK
100
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
3.5
TBD
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/9


Part Number STP9NM60
Description N-channel Power MOSFET
Maker STMicroelectronics
PDF Download

STP9NM60 Datasheet PDF






Similar Datasheet

1 STP9NM60 N-channel Power MOSFET
STMicroelectronics
2 STP9NM60N N-channel Power MOSFET
STMicroelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy