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STPS16H100CFP Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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® STPS16H100CT/CG/CFP/CR
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
2x8A
100 V
175 °C
0.64 V
FEATURES AND BENEFITS
s NEGLIGIBLE SWITCHING LOSSES
s HIGH JUNCTION TEMPERATURE CAPABILITY
s LOW LEAKAGE CURRENT
s GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifier designed for
high frequency miniature Switch Mode Power
Supplies such as adaptators and on board
DC/DC converters.
A1
K
A2
K
A2
A1K
TO-220AB
STPS16H100CT
A2
A1
D2PAK
STPS16H100CG
A2
K
A1
TO-220FPAB
STPS16H100CFP
A2
K
A1
I2PAK
STPS16H100CR
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
IF(RMS)
IF(AV)
IFSM
IRRM
IRSM
PARM
Tstg
Tj
dV/dt
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward
current δ = 0.5
TO-220AB
Tc = 165°C Per diode
D2PAK / I2PAK
TO-220FPAB Tc = 150°C Per device
Surge non repetitive forward current tp = 10 ms sinusoidal
Repetitive peak reverse current
tp = 2 µs square F = 1kHz
Non repetitive peak reverse current
tp = 100 µs square
Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Value
100
30
8
Unit
V
A
A
16
200 A
1A
2A
8700
W
- 65 to + 175 °C
175 °C
10000 V/µs
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j a)
July 2003 - Ed: 2A
1/7
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STMicroelectronics Electronic Components Datasheet

STPS16H100CFP Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

No Preview Available !

STPS16H100CT/CG/CFP/CR
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to ambient
Rth (c)
Parameter
TO-220AB / D2PAK / I2PAK
TO-220FPAB
TO-220AB / D2PAK / I2PAK
TO-220FPAB
TO-220AB / D2PAK / I2PAK
TO-220FPAB
Per diode
Total
Coupling
Value
1.6
4
1.1
3.5
0.6
3
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Unit
°C/W
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
IR *
VF**
Parameter
Reverse leakage Current
Forward Voltage drop
Tests Conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 25°C
IF = 8 A
Tj = 125°C IF = 8 A
Tj = 25°C
IF = 16 A
Tj = 125°C IF = 16 A
Min.
Typ.
1.6
0.59
0.67
Max.
3.6
5
0.77
0.64
0.88
0.73
Unit
µA
mA
V
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.55 x IF(AV) + 0.011 x IF2(RMS)
Fig. 1: Conduction losses versus average current.
PF(AV)(W)
7
6
5
4
3
2
1
0
012
δ = 0.1 δ = 0.2
δ = 0.05
δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
3 4 5 6 7 8 9 10
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
IF(AV)(A)
9
8
Rth(j-a)=Rth(j-c)
7
6
5
4 Rth(j-a)=50°C/W
3
2T
1
0 δ=tp/T
tp
0 25 50
Tamb(°C)
75 100
TO-220AB/D²PAK/I²PAK
125 150
175
2/7
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Part Number STPS16H100CFP
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Maker STMicroelectronics
Total Page 7 Pages
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