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STPS16H100CR Datasheet High Voltage Power Schottky Rectifier

Manufacturer: STMicroelectronics

Overview: ® STPS16H100CT/CG/CFP/CR HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF(AV) VRRM Tj (max) VF.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

Dual center tap Schottky rectifier designed for high frequency miniature Switch Mode Power Supplies such as adaptators and on board DC/DC converters.

A2 K A1 K A1 A2 TO-220FPAB STPS16H100CFP I2PAK STPS16H100CR ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current δ = 0.5 TO-220AB D2PAK / I2PAK TO-220FPAB IFSM IRRM IRSM PARM Tstg Tj dV/dt * : Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 165°C Tc = 150°C Per diode Per device Parameter Repetitive peak reverse voltage Value 100 30 8 16 200 1 2 8700 - 65 to + 175 175 10000 A A A W °C °C V/µs Unit V A A tp = 10 ms sinusoidal tp = 2 µs square F = 1kHz tp = 100 µs square tp = 1µs Tj = 25°C dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j − a ) 1/7 July 2003 - Ed: 2A http://..

STPS16H100CT/CG/CFP/CR THERMAL RESISTANCES Symbol Rth (j-c) Junction to ambient Parameter TO-220AB / D PAK / I PAK TO-220FPAB TO-220AB / D PAK / I PAK TO-220FPAB Rth (c) TO-220AB / D PAK / I PAK TO-220FPAB When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF** Parameter Reverse leakage Current Forward Voltage drop Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C

Key Features

  • s 2x8A 100 V 175 °C 0.64 V A2 K K A2 s s s s.

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