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STPS20100CT Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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® STPS20100CT
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
VF (max)
2 x 10A
100V
0.7V
Tj (max)
175°C
A1
K
A2
FEATURES
s Negligible switching losses
s Low forward voltage drop
s Low capacitance
s High reverse avalanche surge capability
DESCRIPTION
High voltage dual Schottky rectifier suited for
switchmode power supplies and other power
converters. Packaged in TO-220AB, this device
is intended for use in medium voltage operation,
and particularly, in high frequency circuitries
where low switching losses and low noise are
required.
ABSOLUTE MAXIMUM RATINGS
A2
K
A1
TO-220AB
STP20100CT
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward current δ = 0.5
IFSM Surge non repetitive forward current
Tc=110°C
VR = 60V
tp=10ms
sinusoidal
Per diode
Per diode
Per device
Per diode
100
30
10
20
200
V
A
A
A
A
IRRM Repetitive peak reverse current
tp=2µs
F=1KHz
Per diode
1
A
IRSM
Tstg
Non repetitive peak reverse current
Storage temperature range
tp=100µs
Per diode
1
- 65 to + 175
A
°C
Tj Maximum junction temperature (*)
175 °C
dV/dt Critical rate of rise of reverse voltage
1000
V/µs
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j a)
August 2002 - Ed:2C
1/4


STMicroelectronics Electronic Components Datasheet

STPS20100CT Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

No Preview Available !

STPS20100CT
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-c) Junction to case
Per diode
Total
Rth (c) Coupling
When the diodes 1 and 2 are used simultaneously :
Tj-Tc(diode 1)=P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
1.6
0.9
0.15
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per diode)
STATIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
IR* Reverse leakage current VR = VRRM Tj = 25°C
Tj = 125°C
VF** Forward voltage drop
IF = 20A
Tj = 125°C
IF = 10A
Tj = 125°C
IF = 20A
Tj = 25°C
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.55 x IF(AV) + 0.015 x IF2(RMS)
Min. Typ. Max. Unit
150 µA
100 mA
0.85 V
0.60 0.70
0.95
Fig. 1 : Average forward power dissipation versus
average forward current. (Per diode)
Fig. 2 : Average current versus ambient
temperature. (duty cycle : 0.5) (Per diode)
PF(av)(W)
12
11
10
=0.1
=0.2
=0.5
=1
9 =0.05
8
7
6
5T
4
3
2
1
IF(av)(A)
=tp/T
tp
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
IF(av)(A)
12
10
Rth(j-a)=Rth(j-c)
8
6
=0.5
T
4
Rth(j-a)=15 oC/W
2
=tp/T
tp
0
0 25 50
Tamb(oC)
75 100
125
2/4


Part Number STPS20100CT
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Maker ST Microelectronics
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STPS20100CT Datasheet PDF






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