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STMicroelectronics Electronic Components Datasheet

STPS20H100CF Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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STPS20H100CT/CF/CG/CG-1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
Tj
VF (max)
2 x 10 A
100 V
175°C
0.64 V
FEATURES AND BENEFITS
n NEGLIGIBLE SWITCHING LOSSES
n HIGH JUNCTION TEMPERATURE CAPABILITY
n GOOD TRADE OFF BETWEEN LEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP
n LOW LEAKAGE CURRENT
n AVALANCHE RATED
n INSULATED PACKAGE: ISOWATT220AB
Insulating Voltage = 2000V DC
Capacitance = 45 pF
A1
K
A2
A2
A1 K
ISOWATT220AB
STPS20H100CF
A2
A1 K
TO-220AB
STPS20H100CT
K
DESCRIPTION
Dual center tap schottky rectifier designed for
high frequency miniature Switched Mode
Power Supplies such as adaptators and on
board DC/DC converters.
A2
A1
D2PAK
STPS20H100CG
A2
K
A1
I2PAK
STPS20H100CG-1
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward current
IF(AV) Average forward TO-220AB
Tc = 160°C
current δ = 0.5 D2PAK / I2PAK
per diode
per device
ISOWATT220AB Tc = 145°C
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
IRRM Repetitive peak reverse current
tp = 2 µs square F = 1kHz
IRSM Non repetitive peak reverse current tp = 100 µs square
Tstg Storage temperature range
Tj Maximum operating junction temperature *
dV/dt Critical rate of rise of reverse voltage
Value
100
30
10
20
Unit
V
A
A
250
1
3
- 65 to + 175
175
10000
A
A
A
°C
°C
V/µs
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j a)
May 2000 - Ed: 3C
1/7


STMicroelectronics Electronic Components Datasheet

STPS20H100CF Datasheet

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

No Preview Available !

STPS20H100CT/CF/CG/CG-1
THERMAL RESISTANCES
Symbol
Rth (j-c) Junction to case
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Rth (c)
Parameter
TO-220AB / D2PAK / I2PAK
ISOWATT220AB
TO-220AB / D2PAK / I2PAK
ISOWATT220AB
TO-220AB / D2PAK / I2PAK
ISOWATT220AB
Per diode
Per diode
Total
Total
Coupling
Coupling
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
1.6
4
0.9
3.2
0.15
2.5
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
IR * Reverse leakage current
VF ** Forward voltage drop
Pulse test : * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
Tests conditions
Tj = 25°C
VR = VRRM
Tj = 125°C
Tj = 25°C
IF = 8 A
Tj = 25°C
IF = 10 A
Tj = 25°C
IF = 16 A
Tj = 25°C
IF = 20 A
Tj = 125°C IF = 8 A
Tj = 125°C IF = 10 A
Tj = 125°C IF = 16 A
Tj = 125°C IF = 20 A
To evaluate the maximum conduction losses use the following equation :
P = 0.55 x IF(AV) + 0.009 x IF2(RMS)
Min.
Typ.
2
0.56
0.59
0.65
0.67
Max.
4.5
6
0.71
0.77
0.81
0.88
0.58
0.64
0.68
0.73
Unit
µA
mA
V
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
8
δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5
6
δ =1
4
2
0
02
2/7
IF(av) (A)
468
T
δ=tp/T
10
tp
12
Fig. 2: Average forward current versus ambient
temperature (δ=0.5, per diode).
IF(av)(A)
12
10
8 Rth(j-a)=15°C/W
Rth(j-a)=40°C/W
6
Rth(j-a)=Rth(j-c)
TO220AB
ISOWATT220AB
4
2
Tamb(°C)
0
0 25 50 75 100 125 150 175


Part Number STPS20H100CF
Description HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Maker STMicroelectronics
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STPS20H100CF Datasheet PDF






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