STPS20H100C
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
100
V
IF(RMS) Forward rms current
30
A
Per diode
10
TO-220AB, D2PAK, I2PAK TC = 160 °C
IF(AV)
Average forward current δ = 0.5, square
wave
Per device
20
A
TC = 145 °C Per diode
10
TO-220FPAB
TC = 125 °C Per device
20
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
250
A
PARM Repetitive peak avalanche power
tp = 10 µs, Tj= 125 °C
775
W
Tstg Storage temperature range
-65 to + 175 °C
Tj Maximum operating junction temperature (1)
+ 175
°C
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Symbol
Rth(j-c)
Junction to case
Rth(c)
Coupling
Table 2. Thermal resistance parameter
Parameter
TO-220AB, D2PAK, I2PAK
TO-220FPAB
TO-220AB, D2PAK, I2PAK
TO-220FPAB
TO-220AB, D2PAK, I2PAK
TO-220FPAB
Per diode
Total
-
Value
1.6
4
0.9
3.2
0.15
2.5
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
IF = 10 A
IF = 20 A
Tj = 125 °C
IF = 10 A
IF = 20 A
Min. Typ. Max. Unit
-
4.5
µA
-
2
6
mA
-
0.77
-
0.88
V
-
0.59 0.64
-
0.67 0.73
DS1216 - Rev 10
page 2/18
