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STPS20L40CFP Datasheet

LOW DROP POWER SCHOTTKY RECTIFIER

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® STPS20L40CF/CW/CT/CFP
LOW DROP POWER SCHOTTKY RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
IF(AV)
VRRM
Tj (max)
VF (max)
2 x 10 A
40 V
150°C
0.5 V
A1
K
A2
FEATURES AND BENEFITS
s LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
s LOW DYNAMIC LOSSES AS A RESULT OF
THE SCHOTTKY BARRIER
s INSULATED PACKAGE:
TO-220FPAB
Insulating voltage = 200V DC
Capacitance = 12pF
ISOWATT220AB,
s AVALANCHE CAPABILITY SPECIFIED
DESCRIPTION
Dual center tap Schottky rectifiers designed for
high frequency switched mode power supplies and
DC to DC converters.
These devices are intended for use in low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.
ABSOLUTE RATINGS (limiting values, per diode)
A2
K
A1
TO-220FPAB
STPS20L40CFP
A2
A1 K
TO-220AB
STPS20L40CT
A2
A1 K
ISOWATT220AB
STPS20L40CF
A2
K
A1
TO-247
STPS20L40CW
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
40
IF(RMS) RMS forward current
30
IF(AV)
IFSM
Average forward
current
TO-220AB
TO-247
ISOWATT220AB
TO-220FPAB
Surge non repetitive forward current
Tc = 135°C Per diode
δ = 0.5
Per device
Tc = 115°C Per diode
δ = 0.5
Per device
tp = 10 ms Sinusoidal
10
20
10
20
180
IRRM Peak repetitive reverse current
tp = 2 µs square F=1kHz
1
IRSM Non repetitive peak reverse current
tp = 100 µs square
2
PARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
4000
Tstg Storage temperature range
- 65 to + 150
Tj Maximum operating junction temperature *
150
dV/dt Critical rate of rise of reverse voltage
10000
* : dPtot <
1 thermal runaway condition for a diode on its own heatsink
dTj Rth( j a)
July 2003 - Ed: 4B
Unit
V
A
A
A
A
A
A
W
°C
°C
V/µs
1/8


STMicroelectronics Electronic Components Datasheet

STPS20L40CFP Datasheet

LOW DROP POWER SCHOTTKY RECTIFIER

No Preview Available !

STPS20L40CF/CW/CT/CFP
THERMAL RESISTANCES
Symbol
Rth(j-c) Junction to case
Rth(j-c) Junction to case
Rth(j-c) Junction to case
Parameter
ISOWATT220AB
TO-220FPAB
TO-247
TO-220AB
Per diode
Total
Coupling
Per diode
Total
Coupling
Per diode
Total
Coupling
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Value
4.5
3.5
2.5
2.2
1.20
0.3
2.2
1.3
0.3
Unit
°C/W
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
Tests Conditions
IR * Reverse leakage
current
Tj = 25°C
Tj = 100°C
VR = VRRM
VF * Forward voltage drop Tj = 25°C
IF = 10 A
Tj = 125°C
IF = 10 A
Tj = 25°C
IF = 20 A
Tj = 125°C
IF = 20 A
Pulse test : * tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.28 x IF(AV) + 0.022 IF2(RMS)
Min.
Typ.
15
0.44
0.62
Max.
0.7
35
0.55
0.5
0.73
0.72
Unit
mA
mA
V
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
PF(av)(W)
8 δ = 0.1 δ = 0.2
7
δ = 0.05
δ = 0.5
6
5 δ=1
4
3
2T
1
IF(av) (A)
δ=tp/T
0
0 2 4 6 8 10 12
tp
14
Fig. 2: Average forward current versus ambient
temperature(δ = 0.5, per diode).
IF(av)(A)
12
11
10
9
8
7
6
5
4
3T
2
1 δ=tp/T
tp
0
0 25
Rth(j-a)=Rth(j-c)
TO-220AB/TO-247
ISOWATT220AB
Rth(j-a)=15°C/W
Tamb(°C)
50 75 100 125 150
2/8


Part Number STPS20L40CFP
Description LOW DROP POWER SCHOTTKY RECTIFIER
Maker ST Microelectronics
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STPS20L40CFP Datasheet PDF






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