STPS20L60CR Datasheet | STMicroelectronics

FEATURES AND BENEFITS LOW FORWARD VOLTAGE DROP NEGLIGIBLE SWITCHING LOSSES LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED s s s s A2 A2 A1 K A1 TO-220AB STPS20L60CT D2PAK STPS20L60CG DESCRIPTION Dual center tap Schottky rectifiers suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB, I2PAK and D2PAK, this device is intended for use in high frequency inverters. A2 K A1 I2PAK STPS20L60CR ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM PARM Tstg Tj d V/dt - : Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature - Critical rate of rise of reverse voltage Tc = 140°C δ = 0.5 Per diode Per device Value 60 30 10 20 220 1 5800 - 65 to + 175 150 10000 Unit V A A A A W °C °C V/µs tp = 10 ms Sinusoidal tp = 2 µs square F = 1k Hz tp = 1µs Tj = 25°C d Ptot 1 thermal runaway condition for a diode on its own heatsink < d Tj Rth( j - a ) 1/6 July 2003 - Ed: 3C STPS20L60CT/CG/CR THERMAL RESISTANCE Symbol Rth (j-c) Rth (c) Junction to case Parameter TO-220AB / I PAK / D PAK TO-220AB / I2PAK / D2PAK 2 2 Value Per diode Total Coupling 1.6 0.85 0.1 Unit °C/W °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR - Parameter Reverse leakage current Tests conditions Tj = 25°C Tj = 125°C VF - Forward voltage drop Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : - tp = 380 µs, δ < 2% Min. Typ. Max. 350 Unit µA m A V VR = VRRM 65 IF = 10 A IF = 10 A IF = 20 A IF = 20 A 0.62 0.48 95 0.6 0.56 0.74 0.7 To evaluate the conduction losses use the following equation : P = 0.42x IF(AV) + 0.014 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward...