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STPS20M100S Datasheet

Power Schottky rectifier

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STPS20M100S
Power Schottky rectifier
Features
High current capability
Avalanche rated
Low forward voltage drop current
High frequency operation
Insulated package:
– Insulation voltage 2000 V rms
– Package capacitance = 12 pF
Description
Single Schottky rectifier, suited for high frequency
switch mode power supply.
Packaged in TO-220AB, TO-220FPAB, D2PAK
and I2PAK, this device is intended to be used in
notebook, game station and desktop adaptors,
providing in these applications a good efficiency
at both low and high load.
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
VF(typ)
20 A
100 V
150 °C
0.455 V
A(1)
A(3)
K
A
AK
TO-220AB
STPS20M100ST
A
AK
TO-220FPAB
STPS20M100SFP
K(2)
A
AK
I2PAK
STPS20M100SR
K
A
A
D2PAK
STPS20M100SG-TR
Figure 1. Electrical characteristics (a)
VI
"Forward"
I
2 x IO
X
VRRM
VAR VR
IF
IO
IR
X
V
"Reverse"
VTo VF(Io) VF VF(2xIo)
IAR
March 2009
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 14 VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics
Rev 1
1/11
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STMicroelectronics Electronic Components Datasheet

STPS20M100S Datasheet

Power Schottky rectifier

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Characteristics
1 Characteristics
STPS20M100S
Table 2. Absolute ratings (limiting values with terminals 1 and 3 short circuited)
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Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
IFSM
Repetitive peak reverse voltage
Forward current rms
Average forward current δ = 0.5
Surge non repetitive forward current
TO-220AB, D2PAK, I2PAK, Tc = 130 °C
TO-220FPAB, Tc = 85 °C
tp = 10 ms sinusoidal,
terminals 1 and 3 short circuited
100 V
30 A
20 A
530 A
PARM(1) Repetitive peak avalanche power
tp = 1 µs Tj = 25 °C
16000
W
VARM (2)
Maximum repetitive peak avalanche
voltage
tp < 1 µs Tj < 150 °C
IAR < 40 A
120 V
VASM (2)
Maximum single pulse peak
avalanche voltage
tp < 1 µs Tj < 150 °C
IAR < 40 A
120 V
Tstg Storage temperature range
Tj Maximum operating junction temperature (3)
-65 to + 175 °C
150 °C
1. For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to Figure 14
3.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j-------a----)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Rth(j-c) Junction to case
Parameter
TO-220AB, D2PAK, I2PAK
TO-220FPAB
Value
1.2
4
Unit
°C/W
Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol
Parameter
Test Conditions
Min. Typ.
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = 70 V
VR = 100 V
IF = 5 A
IF = 10A
IF = 20 A
5
5
10
10
550
455
660
530
775
610
To evaluate the conduction losses use the following equation:
P = 0.425 x IF(AV) + 0.0088 x IF2(RMS)
Max.
40
40
730
600
850
690
Unit
µA
mA
µA
mA
mV
2/11


Part Number STPS20M100S
Description Power Schottky rectifier
Maker ST Microelectronics
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