STPS30170CG Overview
PARM Tstg Tj Repetitive peak reverse voltage Forward rms current Average forward current δ = 0.5, square wave TC = 150 °C Per diode Per device Surge non repetitive forward current tp = 10 ms sinusoidal Repetitive peak avalanche power tp = 10 µs, Tj = 125 °C Storage temperature range Maximum operating junction temperature (1) 170 V 30 A 15 A VF(2) Characteristics Table 4: Static
STPS30170CG Key Features
- High junction temperature capability
- Good trade off between leakage current and
- Low leakage current
- Avalanche capability specified
- ECOPACK®2 pliant ponent for
- 65 to +175
- 0.69 0.75
- 0.8 0.86
