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STPS30L120CFP Datasheet

Power Schottky rectifier

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STPS30L120C
Datasheet
120 V power Schottky rectifier
A1
K
A2
K
A2
A1 K
TO-220AB
K
A2
K
A1
TO-220FPAB
A2
I²PAK
K
A1
Product status link
STPS30L120C
Product summary
Symbol
Value
IF(AV)
2 x 15A
VRRM
120 V
Tj (max.)
150 °C
VF (typ.)
0.65 V
Features
• High junction temperature capability
• Avalanche capability specified
• Low forward voltage drop current
• High frequency operation
• Insulated package: TO-220FPAB
– Insulating voltage = 1500 VRMS
• ECOPACK®2 compliant
Applications
• Switching diode
• SMPS
• DC/DC converter
• LED lighting
• Notebook adapter
Description
This dual center tap Schottky rectifier is optimized for high frequency switch mode
power supplies.
Packaged in TO-220AB, I2PAK and TO-220FPAB, the STPS30L120C provides
adaptor designers with an optimized price-performance ratio.
DS6493 - Rev 4 - July 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STPS30L120CFP Datasheet

Power Schottky rectifier

No Preview Available !

STPS30L120C
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, per diode)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current, δ = 0.5 square wave
Per diode
Per device
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
Tstg
Storage temperature range
Tj
Maximum operating junction temperature(1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value
Unit
120
V
30
A
15
A
30
220
A
828
W
-65 to +175 °C
150
°C
Symbol
Rth(j-c)
Rth(c)
Junction to case
Coupling
Table 2. Thermal resistance parameters
Parameter
TO-220AB, I²PAK
TO-220FPAB
TO-220AB, I²PAK
TO-220FPAB
Per diode
Total
Per diode
Total
Value
1.3
0.7
4.5
3.8
0.1
3
Unit
°C/W
When the diodes 1 and 2 are used simultaneously:
Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
For more information, please refer to the following application note:
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
Tj = 125 °C
IF = 5 A
Tj = 25 °C
Tj = 125 °C
IF = 15 A
Tj = 25 °C
Tj = 125 °C
IF = 30 A
Min. Typ.
Max. Unit
-
200
µA
-
12
35
mA
-
0.675
-
0.51
0.57
-
0.88
V
-
0.65
0.71
-
1.08
-
0.755
0.84
DS6493 - Rev 4
page 2/14



Part Number STPS30L120CFP
Description Power Schottky rectifier
Maker STMicroelectronics
Total Page 3 Pages
PDF Download

STPS30L120CFP Datasheet PDF





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