900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




STMicroelectronics Electronic Components Datasheet

STPS30M100S Datasheet

Power Schottky

No Preview Available !

www.datasheet4u.com
STPS30M100S
100 V, 30 A power Schottky rectifier
Features
Avalanche rated
Low VF
Good trade off between leakage current and
forward voltage drop
High frequency operation
Avalanche capability specified
Description
Single Schottky rectifier, suited for high frequency
switch mode power supply.
Packaged in TO-220AB,TO-220FPAB, and I2PAK
this device is intended to be used in notebook and
game station adaptors, providing in these
applications a good efficiency at both low and
high load.
Figure 1. Electrical characteristics (a)
VI
"Forward"
I
2 x IO
X
VRRM
VAR VR
IF
IO
IR
X
V
"Reverse"
VTo VF(Io) VF VF(2xIo)
A
A
K
K
A
AK
TO-220AB
STPS30M100ST
A
AK
TO-220FPAB
STPS30M100SFP
A
AK
I2PAK
STPS30M100SR
Table 1. Device summary
IF(AV)
VRRM
Tj (max)
VF(typ)
30 A
100 V
150° C
0.385 V
IAR
a. VARM and IARM must respect the reverse safe
operating area defined in Figure 14. VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics
March 2009
Rev 1
1/10
www.st.com
10


STMicroelectronics Electronic Components Datasheet

STPS30M100S Datasheet

Power Schottky

No Preview Available !

Characteristics
1 Characteristics
STPS30M100S
www.datasheet4u.com
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
IF(RMS)
IF(AV)
IFSM
PARM
VARM (1)
VASM (1)
Tstg
Tj
Repetitive peak reverse voltage
Forward rms current
Average forward current δ = 0.5
Tc = 125 °C
Surge non repetitive forward current tp = 10 ms sinusoidal
Repetitive peak avalanche power
tp = 1 µs Tj = 25° C
Maximum repetitive peak avalanche
voltage
tp < 1 µs Tj < 150 °C
IAR < 66 A
Maximum single pulse peak avalanche tp < 1 µs Tj < 150 °C
voltage
IAR < 66 A
Storage temperature range
Maximum operating junction temperature (2)
100
60
30
300
26400
120
120
-65 to + 175
150
1. Refer to Figure 14.
2.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j-------a----)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
V
A
A
A
W
V
V
°C
°C
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
TO-220AB, I2PAK
TO-220FPAB
Per diode
1
°C/W
4
Table 4. Static electrical characteristics with all leads connected on board
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
VR = VRRM
VR = 70 V
IF = 5 A
IF = 10 A
IF = 15 A
IF = 30 A
175
20 50
60
10 20
0.475
0.385
0.555
0.475
0.620 0.660
0.525 0.565
0.740 0.800
0.605 0.655
µA
mA
µA
mA
V
2/10


Part Number STPS30M100S
Description Power Schottky
Maker ST Microelectronics
PDF Download

STPS30M100S Datasheet PDF





Similar Datasheet

1 STPS30M100DJF Power Schottky rectifier
STMicroelectronics
2 STPS30M100S Power Schottky
ST Microelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy