Characteristics
1
Characteristics
STPS30M60S
Table 2.
Absolute ratings (limiting values with terminals 1 and 3 short circuited at
25 °C, unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
60
V
IF(RMS) Forward rms current
90
A
IF(AV) Average forward current, δ = 0.5
Tc = 130 °C Per package
30
A
IFSM Surge non repetitive forward current
PARM(1) Repetitive peak avalanche power
tp = 10 ms sine-wave
Tj = 25 °C, tp = 1 µs
600
A
34400
W
VARM(2)
Maximum repetitive peak
avalanche voltage
tp < 1 µs, Tj < 150 °C, IAR < 129 A
80
V
VASM(2)
Maximum single-pulse
peak avalanche voltage
tp < 1 µs, Tj < 150 °C, IAR < 129 A
80
V
Tstg Storage temperature range
Tj Maximum operating junction temperature(3)
-65 to +175 °C
150
°C
1. For temperature or pulse time duration deratings, please refer to Figure 4 and 5. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025.
2. See Figure 12
3.
dPtot
dTj
<1
Rth(j-a)
condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c) Junction to case
0.9
°C/W
Table 4. Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Reverse leakage
current
Tj = 25 °C
Tj = 125 °C
VR = VRM
-
-
VF(2)
Forward voltage drop
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 15 A
IF = 30 A
-
-
-
-
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.395 x IF(AV) + 0.0047 x IF2(RMS)
35
165
µA
25
100
mA
0.475 0.515
0.380 0.425
V
0.540 0.590
0.470 0.535
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Doc ID 022049 Rev 1
