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STPS5H100UFN Datasheet

power Schottky rectifier

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STPS5H100UFN
Datasheet
5 A - 100 V power Schottky rectifier
Product status link
STPS5H100UFN
Product summary
Symbol
Value
IF(AV)
5A
VRRM
100 V
Tj (max.)
175 °C
VF (typ.)
0.545 V
Features
• Low profile design – package height of 1.1 mm
• Wettable flanks for automatic visual inspection
• Low forward voltage drop
• Avalanche capability
ECOPACK2 compliant
Applications
• Switching diode
• Notebook adapter
• LED lighting
• DC/DC converter
Description
This high voltage Schottky barrier rectifier has been optimized for use in high
frequency miniature DC/DC converters, reverse battery protection, battery chargers
and adaptors.
Packaged in SMB Flat Notch, the STPS5H100UFN provides a high level of
performance in a compact and flat package which can withstand very high operating
junction temperature.
DS13227 - Rev 1 - January 2020
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STPS5H100UFN Datasheet

power Schottky rectifier

No Preview Available !

STPS5H100UFN
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(AV) Average forward current, δ = 0.5 square wave
TL = 115 °C
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
Tstg
Storage temperature range
Tj
Maximum operating junction temperature(1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value
Unit
100
V
5
A
190
A
518
W
-65 to +175 °C
+175
°C
Symbol
Rth(j-l)
Table 2. Thermal resistance parameters
Parameter
Typ.
Junction to lead
6.6
Unit
°C/W
For more information, please refer to the following application note:
• AN5088: Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter
IR(1)
Reverse leakage current
VF(2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
Tj = 125 °C
IF = 2.5 A
Tj = 25 °C
Tj = 125 °C
IF = 5 A
Min. Typ.
Max. Unit
-
8
µA
-
1.5
5
mA
-
0.640
-
0.480 0.540
V
-
0.745
-
0.545 0.610
To evaluate the conduction losses, use the following equation:
P = 0.470 x IF(AV) + 0.028 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses:
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses in a power diode
DS13227 - Rev 1
page 2/8



Part Number STPS5H100UFN
Description power Schottky rectifier
Maker STMicroelectronics
Total Page 3 Pages
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