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STPS660CB Datasheet POWER SCHOTTKY RECTIFIER

Manufacturer: STMicroelectronics

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General Description

High voltage dual Schottky rectifier suited to Switch Mode Power Supplies and other Power Converters.

Packaged in DPAK, this device is intended for use in medium voltage operation, and particularly, in high frequency circuitries where low switching losses are required.

DPAK 4 2x3A 60 V 0.59 V 1 2, 4(T A B) 3 2 1 3 ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Storage temperature range Maximum junction temperature Critical rate of rise of reverse voltage Tcase = 120°C δ = 0.5 tp = 10 ms Sinusoidal tp = 2 µs F = 1kHz Value 60 6 3 50 1 - 65 to + 150 125 10000 V/µs Unit V A A A A °C July 1998 - Ed : 1C 1/3 DataSheet 4 U .com www.DataSheet4U.com STPS660CB(-TR) THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter Per diode Total STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF ** Pulse test : Value 3.5 2 Unit °C/W Tests Conditions Reverse leakage current Forward voltage drop * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% Tests Conditions Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C IF = 3 A IF = 3 A VR = 60 V Min.

Overview

www.DataSheet4U.com ® STPS660CB(-TR) POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF.

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