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STMicroelectronics Electronic Components Datasheet

STPS80170C-T Datasheet

Power Schottky Rectifier

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STPS80170C-Y
Datasheet
Automotive 170 V, 80 A power Schottky rectifier
A1
K
A2
TO-247 LL
A2
K
A1
Product status
STPS80170C-Y
Product summary
IF(AV)
2 x 40 A
VRRM
170 V
Tj(max.)
175 °C
VF(typ.)
0.68 V
Features
• AEC-Q101 qualified
• PPAP capable
• Negligible switching losses
• High junction temperature capability
• Good trade off between leakage current and forward voltage drop
• Low leakage current
• Avalanche capability
• Low thermal resistance
ECOPACK2 compliant
Applications
• DC/DC converter
• LLC topology
• Phase shift topology
Description
Dual center tap Schottky rectifier designed for high frequency switched mode power
supplies such as on board DC/DC converters for automotive applications.
DS13161 - Rev 1 - November 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STPS80170C-T Datasheet

Power Schottky Rectifier

No Preview Available !

STPS80170C-Y
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
Tj = -40 to +175 °C
IF(RMS) Forward rms current
IF(AV) Average forward current, δ = 0.5, square wave
Tc = 155 °C
Tc = 155 °C
Per diode
Per device
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 10 µs, Tj = 125 °C
Tstg Storage temperature range
Tj
Maximum operating junction temperature(1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value
Unit
170
V
80
A
40
A
80
500
A
2750
W
-65 to +175 °C
-40 to +175 °C
Symbol
Rth(j-c)
Table 2. Thermal resistance parameters
Junction to case
Parameter
Per diode
Total
Typ. value
0.34
0.17
Unit
°C/W
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
IR (1)
Reverse leakage current
VF (2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp =380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
Tj = 125 °C
IF = 40 A
Tj = 25 °C
Tj = 125 °C
IF = 80 A
Min. Typ. Max. Unit
-
80
µA
-
20
80
mA
-
0.84
-
0.68 0.74
V
-
0.96
-
0.80 0.86
To evaluate the conduction losses, use the following equation: P = 0.62 x IF(AV) + 0.003 x IF 2 (RMS)
For more information, please refer to the following application notes related to the power losses :
• AN604: Calculation of conduction losses in a power rectifier
• AN4021: Calculation of reverse losses on a power diode
DS13161 - Rev 1
page 2/9



Part Number STPS80170C-T
Description Power Schottky Rectifier
Maker STMicroelectronics
Total Page 3 Pages
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