STPSC10065 Overview
This 10 A, 650 V SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
STPSC10065 Key Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC