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STPSC10TH13TI Datasheet Dual 650v Power Schottky Silicon Carbide Diode

Manufacturer: STMicroelectronics

Overview: STPSC10TH13TI Dual 650 V power Schottky silicon carbide diode in series    ,QVXODWHG72$%.

General Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Key Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Suited for specific bridge-less topologies.
  • High forward surge capability.
  • Insulated package:.
  • Capacitance: 7 pF.
  • Insulated voltage: 2500 V rms Datasheet - production data.

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