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STPSC15H12 - 1200V power Schottky silicon carbide diode

General Description

The SiC diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier.

It is manufactured using a silicon carbide substrate.

The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating.

Key Features

  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Robust high voltage periphery.
  • Operating from -40 °C to 175 °C.
  • Low VF.
  • ECOPACK2 compliant component.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STPSC15H12 Datasheet 1200 V, 15 A power Schottky silicon carbide diode A K K K A K TO-220AC A K DO-247 LL Product label Features • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • Operating from -40 °C to 175 °C • Low VF • ECOPACK2 compliant component Applications • EV charging stations • Solar boost converters • PV converters Description The SiC diode, available in TO-220AC and TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible.