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STPSC20H12-Y - silicon carbide power Schottky diode

General Description

The SiC diode is an ultra high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating.

Key Features

  • AEC-Q101 qualified.
  • No or negligible reverse recovery.
  • Switching behavior independent of temperature.
  • Robust high voltage periphery.
  • PPAP capable.
  • Operating Tj from -40 °C to 175 °C.
  • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STPSC20H12-Y Datasheet Automotive 1200 V, 20 A, silicon carbide power Schottky diode A K K K A K TO-220AC K K A NC D²PAK A A NC D²PAK HV Product label Product status link STPSC20H12-Y Product summary IF(AV) 20 A VRRM 1200 V Tj (max.) 175 °C VF (typ.) 1.35 V Features • AEC-Q101 qualified • No or negligible reverse recovery • Switching behavior independent of temperature • Robust high voltage periphery • PPAP capable • Operating Tj from -40 °C to 175 °C • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPACK compliant Applications • On board charger Description The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate.