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STPSC2H065 - power Schottky diode

General Description

The SiC diode is an ultra-high performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Key Features

  • No reverse recovery charge in.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STPSC2H065 Datasheet 650 V, 2 A high surge silicon carbide power Schottky diode AK Product label Product status STPSC2H065 Product summary Symbol Value IF(AV) 2A VRRM 650 V Tj(max.) 175 °C VF(typ.) 1.38 V Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • ECOPACK2 compliant component • Power efficient product Applications • Switch mode power supply • PFC • "DC/DC" converters • LLC topologies • Boost diode Description The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.