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STPSC4H065 - 4A high surge silicon carbide power Schottky diode

General Description

This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

Key Features

  • No reverse recovery charge in.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STPSC4H065 Datasheet 650 V, 4 A high surge silicon carbide power Schottky diode TO-220AC DPAK TO-220AC ins. Features • No reverse recovery charge in application current range • Switching behavior independent of temperature • High forward surge capability • Insulated package TO-220AC Ins: – Insulated voltage: 2500 VRMS – Typical package capacitance: 7 pF • Power efficient product • ECOPACK®2 compliant component Applications • Switch mode power supply • PFC • DCDC converters • LLC topologies • Boost diode Product status STPSC4H065 Product summary Symbol Value IF(AV) 4A VRRM 650 V Tj(max.) 175 °C Product label Description This 4 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.