Datasheet Details
| Part number | STPSC806D |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 115.08 KB |
| Description | 600 V power Schottky silicon carbide diode |
| Datasheet |
 STPSC806D Datasheet
|
|
|
| Part number | STPSC806D |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 115.08 KB |
| Description | 600 V power Schottky silicon carbide diode |
| Datasheet |
STPSC806D Datasheet
|
|
|
|
The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
www.DataSheet4U.com STPSC806D 600 V power Schottky silicon carbide.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
STPSC806 | Schottky Barrier 600 V power Schottky silicon carbide diode | ST Microelectronics |
| Part Number | Description |
|---|---|
| STPSC8H065 | 650V 8A high surge silicon carbide power Schottky diode |
| STPSC8H065-Y | Automotive 650V 8A high surge silicon carbide power Schottky diode |
| STPSC8H065DLF | 650V power Schottky silicon carbide diode |
| STPSC8TH13TI | Dual 650V power Schottky silicon carbide diode |
| STPSC10065 | Schottky silicon carbide diode |
| STPSC10065DLF | power Schottky silicon carbide diode |
| STPSC1006D | 600 V power Schottky silicon carbide diode |
| STPSC10H065 | power Schottky silicon carbide diode |
| STPSC10H065-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC10H065BY-TR | Schottky silicon carbide diode |