STPSC806D Description
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
- Part: STPSC806D
- Manufacturer: STMicroelectronics
- Size: 115.08 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
STMicroelectronics |
STPSC806 | Schottky Barrier 600 V power Schottky silicon carbide diode |