STQ1HN60K3-AP datasheet, mosfet equivalent, STMicroelectronics

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STQ1HN60K3-AP Features and benefits

Order code VDS STQ1HN60K3-AP 600 V RDS(on) max 8Ω ID PTOT 0.4 A 3 W
* 100% avalanche tested
* Extremely high dv/dt capability
* Gate charge minimized

STQ1HN60K3-AP Application

* Switching applications G(1) S(3) AM01476v1 Description This SuperMESH3™ Power MOSFET is the result of improveme.

STQ1HN60K3-AP Description

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low onresistance, superior dynamic performance and hig.

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