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STQ1HNK60R-AP - N-CHANNEL MOSFET

General Description

G(1) These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.

Key Features

  • Order code VDS STN1HNK60 STQ1HNK60R-AP 600 V.
  • Extremely high dv/dt capability.
  • 100% avalanche tested.
  • Gate charge minimized.

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Full PDF Text Transcription for STQ1HNK60R-AP (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STQ1HNK60R-AP. For precise diagrams, and layout, please refer to the original PDF.

STN1HNK60, STQ1HNK60R-AP Datasheet N-channel 600 V, 7.3 Ω typ., 0.4 A SuperMESH™ Power MOSFETs in a SOT-223 and TO-92 packages 4 1 23 SOT-223 3 2 1 TO-92 (Ammopack) D(2, ...

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SOT-223 and TO-92 packages 4 1 23 SOT-223 3 2 1 TO-92 (Ammopack) D(2, 4) Features Order code VDS STN1HNK60 STQ1HNK60R-AP 600 V • Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized Applications • Switching applications RDS(on) max. 8.5 Ω ID 0.4 A Package SOT-223 TO-92 Description G(1) These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™.

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