This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
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STQ3N45K3-AP N-channel 450 V - 3.3 Ω typ., 0.6 A Zener-protected, SuperMESH3™ Power MOSFET in a TO-92 package Datasheet - production data Features 3 2 1 TO-92 Figure 1. I...
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2 package Datasheet - production data Features 3 2 1 TO-92 Figure 1. Internal schematic diagram ' * 6 AM01476v1 Order code VDSS STQ3N45K3-AP 450 V RDS(on) max <4Ω ID Pw 0.6 A 3 W • 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • Switching applications Description This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
STQ3N45K3-AP Datasheet
