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STRH12P10 Datasheet

Rad-Hard P-channel Power MOSFET

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STRH12P10
Datasheet
Rad-Hard P-channel, 100 V, 12 A Power MOSFET
TO-257 AA
D(1)
G(3)
S(2)
SCO6140p
Product status link
STRH12P10
Features
VDS
ID
100 V
12 A
• Fast switching
• 100% avalanche tested
• Hermetic package
• 100 krad TID
• SEE radiation hardened
RDS(on) typ.
265 mΩ
Qg
40 nC
Description
This P-channel Power MOSFET is developed with STMicroelectronics unique
STripFET process. It has specifically been designed to sustain high TID and provide
immunity to heavy ion effects.
This Power MOSFET is fully ESCC qualified.
Product summary
Product summary
Part
numbers
ESCC part
number
Quality
level
Lead
Temp.
Package
Mass
EPPL
finish
range
STRH12P10GY1
Engineering
model
Gold
STRH12P10GYG 5205/029/01
STRH12P10GYT 5205/029/02
ESCC
flight
TO-257AA
5g
Solder
dip
-55 to
150 °C
Yes
Note:
Contact ST sales office for information about the specific conditions
for product in die form and for other packages.
DS8699 - Rev 6 - May 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STRH12P10 Datasheet

Rad-Hard P-channel Power MOSFET

No Preview Available !

STRH12P10
Electrical ratings
1 Electrical ratings
TC= 25 °C unless otherwise specified
Table 1. Absolute maximum ratings (pre-irradiation)
Symbol
Parameter
VDS Drain-source voltage (VGS = 0)
VGS Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
ID(1) Drain current (continuous) at Tcase = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total power dissipation at Tcase = 25 °C
dv/dt(3)
Peak diode recovery voltage slope
Tstg Storage temperature range
Tj Max. operating junction temperature range
1. Rated according to the Rthj-case + Rthc-s
2. Pulse width limited by safe operating area.
3. ISD ≤ 12 A, di/dt ≤ 36 A/μs, VDD = 80 %V(BR)DSS.
Value
100
±18
12
7.5
48
75
2.4
-55 to 150
150
Symbol
Rthj-case
Rthc-s
Table 2. Thermal data
Parameter
Thermal resistance junction-case max.
Thermal resistance case-sink typ.
Value
1.47
0.20
Unit
V
V
A
A
A
W
V/ns
°C
°C
Unit
°C/W
°C/W
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj max)
EAS(1)
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V) at 110 °C
Repetitive pulse avalanche energy
(VDS = 50 V, IAR = 6 A, f = 10 KHz,
TJ = 25 °C, duty cycle = 50%)
EAR
Repetitive pulse avalanche energy
(VDS = 50 V, IAR = 6 A, f = 10 KHz,
TJ = 110 °C, duty cycle = 50%)
1. Maximum rating value.
Value
6
112
17
5.5
Unit
A
mJ
mJ
mJ
DS8699 - Rev 6
page 2/16


Part Number STRH12P10
Description Rad-Hard P-channel Power MOSFET
Maker STMicroelectronics
Total Page 16 Pages
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