STRH12P10 Datasheet | STMicroelectronics

Rad-Hard 100 V, 12 A, P-channel Power MOSFET 3 12 TO-257 AA The case is not connected to any lead D(1) G(3) S(2) SCO6140p Product status link STRH12P10 Features 100 V 12 A - Fast switching - 100% avalanche tested - Hermetic package - 100 krad TID - SEE radiation hardened RDS(on) typ. 265 mΩ Qg 40 n C Description The STRH12P10 is a P-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/029 and available in TO-257AA hermetic package, it is specifically remended for space and harsh environment applications and suitable for in-Satellite power conversion, motor control and power switch circuits. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Part numbers STRH12P10GY1 STRH12P10GYG STRH12P10GYT Product summary Quality level ESCC part...