STRH12P10 Overview
Description
The STRH12P10 is a P-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE).
Key Features
- Fast switching
- 100% avalanche tested
- Hermetic package
- 100 krad TID
- SEE radiation hardened RDS(on) typ. 265 mΩ Qg 40 nC
