STRH80P6FSY3 Datasheet | STMicroelectronics

features .. Type STRH80P6FSY3 VDSS 60V - - - - - - - - - - - Low RDS(on) Fast switching Single event effect (SEE) hardned Low total gate charge Light weight 100% avalanche tested Application oriented characterization Hermetically sealed Heavy ion SOA 100k Rad TID SEL & SEGR with 34Mev/cm²/mg LET ions TO-254AA Internal schematic diagram Description This Power MOSFET series realized with STMicroelectronics unique STrip FET process has specifically been designed to sustain high TID and provide immunity to heavy ion effects. It is therefore suitable as power switch in mainly highefficiency DC-DC converters. It is also intended for any application with low gate charge drive requirements. Application - - Satellite High reliability Order codes Part number STRH80P6FSY1 STRH80P6FSY3 1. Mil temp range 2. Space flights parts (full ESA flow screening) (1) (2) Marking RH80P6FSY1 RH80P6FSY3 Package TO-254AA TO-254AA Packaging Individual strip pack Individual strip pack March 2007 Rev 2 1/12 .st. 12 Contents Contents 1 2 Electrical ratings - - - - - - - - . . . . 3 Electrical characteristics - - - - - - - . . 4 2.1...