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STS10DN3LH5 - Power MOSFETs

Description

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.

Table 1.

Features

  • Type STS10DN3LH5.
  • VDSS 30 V RDS(on) max 0.021 Ω ID 10 A RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses SO-8.

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www.DataSheet4U.com STS10DN3LH5 Dual N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™ V Power MOSFET Features Type STS10DN3LH5 ■ ■ ■ ■ ■ VDSS 30 V RDS(on) max 0.021 Ω ID 10 A RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses SO-8 Application ■ Switching applications Figure 1. Internal schematic diagram Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Table 1. Device summary Marking 10DD3L Package SO-8 Packaging Tape and reel Order codes STS10DN3LH5 May 2009 Doc ID 15624 Rev 1 1/13 www.st.com 13 www.DataSheet4U.
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