Download STS12N3LLH5 Datasheet PDF
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STS12N3LLH5 Key Features

  • production data
  • RDS(on)
  • Qg industry benchmark
  • Extremely low on-resistance RDS(on)
  • Very low switching gate charge
  • High avalanche ruggedness
  • Low gate drive power losses
  • Switching

STS12N3LLH5 Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Device summary Order code STS12N3LLH5 Marking 12D3L Package SO-8 Packaging Tape and reel June 2012 This is information on a product in full production.