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STS4C3F60L
N-CHANNEL 60V - 0.045 Ω - 4A SO-8 P-CHANNEL 60V - 0.100 Ω - 3A SO-8 StripFET™ MOSFET
Table 1: General Features
TYPE STS4C3F60L (N-Channel) STS4C3F60L (P-Channel)
s s s
Figure 1: Package
RDS(on) < 0.055 Ω < 0.120 Ω ID 4A 3A
VDSS 60 V 60 V
s
TYPICAL RDS(on) (N-Channel) = 0.045 Ω TYPICAL RDS(on) (P-Channel) = 0.100 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE SO-8
DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STS4C3F60L Datasheet
