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STMicroelectronics Electronic Components Datasheet

STS4C3F60L Datasheet

StripFET MOSFET

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STS4C3F60L
N-CHANNEL 60V - 0.045 - 4A SO-8
P-CHANNEL 60V - 0.100 - 3A SO-8
StripFET™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on)
ID
STS4C3F60L (N-Channel) 60 V < 0.055 4 A
STS4C3F60L (P-Channel) 60 V < 0.120 3 A
s TYPICAL RDS(on) (N-Channel) = 0.045
s TYPICAL RDS(on) (P-Channel) = 0.100
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This MOSFET is the latest development of STMi-
croelectronics unique ”Single Feature Size™”
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
Figure 1: Package
SO-8
Figure 2: Internal Schematic Diagram
APPLICATIONS
s DC/DC CONVERTERS
s BACK LIGHT INVERTER FOR LCD
Table 2: Order Codes
PART NUMBER
STS4C3F60L
MARKING
S4C3F60L
PACKAGE
SO-8
PACKAGING
TAPE & REEL
September 2004
Rev. 2
1/11


STMicroelectronics Electronic Components Datasheet

STS4C3F60L Datasheet

StripFET MOSFET

No Preview Available !

STS4C3F60L
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
N-CHANNEL P-CHANNEL
VDS Drain-source Voltage (VGS = 0)
60
VDGR
Drain-gate Voltage (RGS = 20 k)
60
VGS Gate-source Voltage
± 16
ID Drain Current (continuous) at TC = 25°C
Single Operating
43
ID Drain Current (continuous) at TC = 100°C
Single Operating
2.5 1.9
IDM ( )
Drain Current (pulsed)
16 12
PTOT
Total Dissipation at TC = 25°C
2
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
-55 to 150
Unit
V
V
V
A
A
A
W
°C
Table 4: Thermal Data
Rthj-amb (1) Thermal Resistance Junction-ambient
(1) When mounted on 1 inch² pad of 2 oz. copper, t 10 s
62.5 °C/W
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
n-ch
p-ch
60
60
IDSS
Zero Gate Voltage
VDS= Max Rating
n-ch
Drain Current (VGS = 0) VDS= Max Rating, TC= 125°C p-ch
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS= ± 16V
VGS= ± 16V
n-ch
p-ch
±100
±100
VGS(th)
Gate Threshold Voltage VDS = VGS, ID= 250 µA
n-ch
p-ch
1
1.5
RDS(on)
Static Drain-source On
Resistance
VGS= 10 V, ID= 2 A
VGS= 10 V, ID= 1.5 A
VGS= 4.5 V, ID= 2 A
VGS= 4.5 V, ID= 1.5 A
n-ch
p-ch
n-ch
p-ch
0.045
0.100
0.050
0.130
0.055
0.120
0.065
0.160
Unit
V
V
µA
µA
nA
nA
V
V
Table 6: Dynamic
Symbol
Parameter
Test Conditions
gfs (1)
Forward
Transconductance
VDS = 30 V, ID= 2 A
VDS = 10 V, ID= 3 A
n-ch
p-ch
Ciss Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0 n-ch
p-ch
Coss
Output Capacitance
n-ch
p-ch
Crss Reverse Transfer
Capacitance
n-ch
p-ch
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min.
Typ.
7
7.2
1030
630
140
121
40
49
Max.
Unit
S
S
pF
pF
pF
pF
pF
pF
2/11


Part Number STS4C3F60L
Description StripFET MOSFET
Maker ST Microelectronics
Total Page 11 Pages
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