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STS4DPF20L Datasheet

Dual P-CHANNEL POWER MOSFET

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STS4DPF20L
DUAL P-CHANNEL 20V - 0.07 - 4A SO-8
STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS4DPF20L
20 V
<0.08
4A
s TYPICAL RDS(on) = 0.07
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN CELLULAR
PHONES
SO-8
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
20 V
VDGR
Drain-gate Voltage (RGS = 20 k)
20 V
VGS Gate- source Voltage
± 16
V
ID
Drain Current (continuos) at TC = 25°C Single Operation
Drain Current (continuos) at TC = 100°C Single Operation
4
2.5
A
A
IDM(•)
Drain Current (pulsed)
16 A
Ptot
Total Dissipation at TC = 25°C Dual Operation
Total Dissipation at TC = 25°C Single Operation
1.6 W
2W
(•) Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
February 2002
1/8
.


STMicroelectronics Electronic Components Datasheet

STS4DPF20L Datasheet

Dual P-CHANNEL POWER MOSFET

No Preview Available !

STS4DPF20L
THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient
Tj Thermal Operating Junction-ambient
Tstg Storage Temperature
(*) When Mounted on 0.5 in2 pad of 2 oz.copper
Single Operation
Dual Operating
62.5
78
-55 to150
-55 to 150
°C/W
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
20
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16 V
±100
Unit
V
µA
µA
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 4.5 V
ID = 2 A
ID = 2 A
Min.
1
Typ.
1.6
0.070
0.085
Max.
2.5
0.08
0.10
Unit
V
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS= 15V
ID = 2 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
10
1350
490
130
Max.
Unit
S
pF
pF
pF
2/8


Part Number STS4DPF20L
Description Dual P-CHANNEL POWER MOSFET
Maker ST Microelectronics
Total Page 8 Pages
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