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STMicroelectronics Electronic Components Datasheet

STS4DPFS2LS Datasheet

P-CHANNEL POWER MOSFET

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STS4DPFS2LS
P-CHANNEL 20V - 0.06- 4A SO-8
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS
MOSFET
VDSS
RDS(on)
20 V < 0.07
SCHOTTKY
IF(AV)
VRRM
3 A 40 V
ID
4A
VF(MAX)
0.44 V
DESCRIPTION
This product associates the latest low voltage
STripFET™ in p-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
SO-8
INTERNAL SCHEMATIC DIAGRAM
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
EAS (1) Single Pulse Avalanche Energy
Value
20
20
± 20
4
3.4
16
2
20
Unit
V
V
V
A
A
A
W
mJ
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VRRM Repetitive Peak Reverse Voltage
IF(RMS) RMS Forward Current
IF(AV)
Average Forward Current
IFSM
Surge Non Repetitive Forward Current
IRRM
Repetitive Peak Reverse Current
dv/dt
Critical Rate Of Rise Of Reverse Voltage
(•)Pulse width limited by safe operating area
(1) Starting Tj = 25°C, ID = 2.5 A, VDD = 20 V
Value
Unit
40 V
10 A
TL = 120°C
δ = 0.5
3
A
tp = 10 ms
Sinusoidal
75
A
tp = 2 µs
F = 1 kHz
1
A
10000
V/µs
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed
February 2001
1/8


STMicroelectronics Electronic Components Datasheet

STS4DPFS2LS Datasheet

P-CHANNEL POWER MOSFET

No Preview Available !

STS4DPFS2LS
THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient MOSFET
Rthj-amb (*)Thermal Resistance Junction-ambient SCHOTTKY
Tstg Storage Temperature Range
Tl Junction Temperature
(*) Mounted on FR-4 board (Steady State)
62.5
100
-55 to 150
150
°C/W
°C/W
°C
°C
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
20
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1 µA
10 µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±100
nA
ON (1)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 2.5 A
VGS = 4.5V, ID = 2.5 A
VDS > ID(on) x RDS(on)max,
VGS = 10V
Min.
1
16
Typ.
1.6
0.06
0.07
Max.
2.5
0.07
0.085
Unit
V
A
DYNAMIC
Symbol
gfs (1)
Parameter
Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max,
ID = 2 A
VDS = 25V, f = 1 MHz, VGS = 0
Min.
Typ.
5
1350
490
130
Max.
Unit
S
pF
pF
pF
2/8


Part Number STS4DPFS2LS
Description P-CHANNEL POWER MOSFET
Maker ST Microelectronics
Total Page 8 Pages
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