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STMicroelectronics Electronic Components Datasheet

STS7NF30L Datasheet

N-CHANNEL POWER MOSFET

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STS7NF30L pdf
® STS7NF30L
N - CHANNEL 30V - 0.021- 7A SO-8
STripFETPOWER MOSFET
TYPE
VDSS
RDS(on)
ID
STS7NF30L
30 V < 0.025
7A
www.DataSheet4Us.comTYPICAL RDS(on) = 0.021
s STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
s LOW THRESHOLD DRIVE
PRELIMINARY DATA
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique " Single Feature
Size" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
SO-8
APPLICATIONS
s DC MOTOR DRIVE
s DC-DC CONVERTERS
s BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
s POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
Drain- gate Voltage (RGS = 20 k)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM()
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
() Pulse width limited by safe operating area
May 1999
Value
30
30
± 20
7
4.4
42
2.5
Unit
V
V
V
A
A
A
W
1/5


STMicroelectronics Electronic Components Datasheet

STS7NF30L Datasheet

N-CHANNEL POWER MOSFET

No Preview Available !

STS7NF30L pdf
STS7NF30L
THERMAL DATA
Rthj-amb
Tj
Tstg
(*)Thermal Resistance Junction-ambient
Maximum Operating Junction Temperature
Storage Temperature
50
150
-55 to 150
oC/W
oC
oC
(*) Mounted on FR-4 board ( (t ≤ 10sec)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
www.DataSheet4U.OcoFmF
Symbol
Parameter
Test Conditions
Min. Typ.
V(BR)DSS Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
30
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
Max.
1
10
± 100
Unit
V
µA
µA
nA
ON ()
Symbol
VGS(th)
RDS(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 3.5 A
Resistance
VGS = 4.5 V ID = 3.5 A
Min.
1
Typ.
1.6
0.021
0.025
Max.
2.5
0.025
0.032
Unit
V
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
20
A
DYNAMIC
Symbol
gfs ()
Ciss
Coss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 3.5 A
Min.
Typ.
10
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0 V
1250
230
50
pF
pF
pF
2/5


Part Number STS7NF30L
Description N-CHANNEL POWER MOSFET
Maker STMicroelectronics
Total Page 5 Pages
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STS7NF30L pdf
STS7NF30L Datasheet PDF
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