STSJ3NM50 - N-CHANNEL POWER MOSFET

ST Microelectronics

Datasheet Details

Part number	STSJ3NM50
Manufacturer	STMicroelectronics
File Size	176.48 KB
Description	N-CHANNEL POWER MOSFET
Datasheet	STSJ3NM50_STMicroelectronics.pdf

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STSJ3NM50.

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Published: Apr 6, 2007 |