High voltage fast-switching NPN power transistor
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ Electronic ballast for fluorescent lighting
■ Flyback and forward single transistor low
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
Figure 1. Internal schematic diagram
Table 1. Device summary
Doc ID 15663 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.