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STT6N3LLH6 Datasheet MOSFET

Manufacturer: STMicroelectronics

Overview: STT6N3LLH6 N-channel 30 V, 0.021 Ω typ., 6 A STripFET™ VI DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data 4 5 6 3 2 1.

General Description

This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Order code STT6N3LLH6 Table 1.

Key Features

  • Order code STT6N3LLH6 VDSS RDS(on) max ID PTOT 0.025 Ω (VGS= 10 V) 30 V 6 A 1.6 W 0.036 Ω (VGS= 4.5 V).
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses Figure 1. Internal schematic diagram.

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