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STTA212S Datasheet

ULTRA-FAST HIGH VOLTAGE DIODE

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® STTA212S
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
www.DataSheet4U.com
IF(AV)
VRRM
trr (typ)
VF (max)
2A
1200V
65ns
1.5V
FEATURES AND BENEFITS
SPECIFIC TO THE FOLLOWING OPERATIONS:
SNUBBING OR CLAMPING, DEMAGHETIZATION
AND RECTIFICATION
ULTRA-FAST AND SOFT RECOVERY
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR
HIGH FREQUENCY OPERATION
HIGH REVERSE VOLTAGE CAPABILITY
SMC
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operations which require extremely
fast, soft and noise-free power diodes.
Due to their optimized switching performances
they aloso highly decrease power losses in any
associated switching IGBT or MOSFET in all
”freewheel mode” operations and is particulary
suitable and efficient in motor control circuitries, or
in primary of SMPS as snubber, clamping or
demagnetizingdiodes secondary of SMPS as high
voltage rectifier diodes. They are also suitable for
the secondary of SMPS as high voltage rectifier
diodes.
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
VRSM
IF(RMS)
IFRM
IFSM
Tstg
Tj
Parameter
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current
tp = 5µs F=5kHz square
Surge non repetitive forward current tp = 10ms sinusoidal
Storage temperature range
Maximum operating junction temperature
Value
1200
1200
10
20
25
- 65 to + 150
125
Unit
V
V
A
A
A
°C
°C
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 4A
1/8


STMicroelectronics Electronic Components Datasheet

STTA212S Datasheet

ULTRA-FAST HIGH VOLTAGE DIODE

No Preview Available !

STTA212S
THERMAL AND POWER DATA
Symbol
Rth(j-I)
P1
Parameter
Junction to lead thermal resistance
Conduction power dissipation
Pmax
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
Test conditions
IF(AV) = 1.5A δ = 0.5
Tlead= 72°C
Tlead= 67°C
Value
21
2.5
2.8
Unit
°C/W
W
W
www.DataSheet4US.coTmATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VF * Forward voltage drop
IR ** Reverse leakage current
Vto Threshold voltage
rd Dynamic resistance
Test pulses : * tp = 380 µs, δ < 2%
** tp = 5 ms , δ < 2%
Test Conditions
IF = 2A
Tj = 25°C
Tj = 125°C
VR = 0.8 Tj = 25°C
x VRRM Tj = 125°C
Ip < 3.IAV Tj = 125°C
Min Typ Max Unit
1.65
1.1 1.5
V
20
150 400
µA
1.15 V
175 m
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
Test conditions
Min Typ Max Unit
trr Reverse recovery Tj = 25°C
time IF = 0.5 A IR = 1A Irr = 0.25A
IF = 1 A dIF/dt =-50A/µs VR = 30V
IRM Maximum recovery Tj = 125°C VR = 600V IF = 2A
current
dIF/dt = -16 A/µs
dIF/dt = -50 A/µs
65
115
3.6
6.0
ns
A
S factor Softness factor
Tj = 125°C VR = 600V IF = 2A
dIF/dt = -50 A/µs
0.9 /
TURN-ON SWITCHING
Symbol
tfr
VFp
Parameter
Forward recovery time
Peak forward voltage
Test conditions
Min Typ Max Unit
Tj = 25°C
IF = 2 A
dIF/dt = 16 A/µs
measured at 1.1 × VFmax
900 ns
35 V
2/8


Part Number STTA212S
Description ULTRA-FAST HIGH VOLTAGE DIODE
Maker STMicroelectronics
Total Page 8 Pages
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