• Part: STTA5012TV1
  • Description: (STTAxxxx) ULTRA-FAST HIGH VOLTAGE DIODE
  • Category: Diode
  • Manufacturer: STMicroelectronics
  • Size: 262.78 KB
Download STTA5012TV1 Datasheet PDF
STMicroelectronics
STTA5012TV1
STTA5012TV1 is (STTAxxxx) ULTRA-FAST HIGH VOLTAGE DIODE manufactured by STMicroelectronics.
FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE PANION TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY. LOW INDUCTANCE PACKAGE < 5 n H. INSULATED PACKAGE : ISOTOPTM Electrical insulation : 2500VRMS Capacitance : < 45p F. ISOTOPTM SOD93 STTA2512P DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all freewheel mode ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IFRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 5 µs F = 5k Hz square tp = 10ms sinusoidal Value 1200 50 300 210 - 65 to + 150 150 Unit V A A A °C °C operations. They are particularly suitable in Motor Control circuitries, or in the primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for secondary of SMPS as high voltage rectifier diodes. ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics. November 1999 - Ed: 4B 1/9 .. .. STTA2512P / STTA5012TV1/2 THERMAL AND POWER DATA (per diode) Symbol Rth(j-c) Parameter Junction to case thermal resistance Coupling thermal resistance Conduction power dissipation IF(AV) = 25A δ =0.5 Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) ISOTOP ISOTOP SOD93 Rth(c) P1 Pmax ISOTOP ISOTOP SOD93 ISOTOP SOD93 Coupling Tc= 70°C Tc= 82°C Tc= 62°C Tc= 75°C 62.5 W Conditions Per diode Total Value 1.4 0.75 1.2 0.1 57 °C/W W Unit °C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol VF - IR - - Vto Rd Test pulses : Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance - tp =...