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STTA812 Datasheet

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

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® STTA812D/DI/G
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
IF(AV)
VRRM
trr (typ)
VF (max)
8A
1200V
50ns
2.0V
FEATURES AND BENEFITS
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY
INSULATED PACKAGE : TO-220AC Ins.
Electrical insulation : 2500VRMS
Capacitance : 7pF.
K
A
K
TO-220AC
STTA812D
K
A
K
TO-220AC Ins.
STTA812DI
A
NC
D2PAK
STTA812G
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operationswhich require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all ”freewheel
mode” operations.
ABSOLUTE RATINGS (limiting values)
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
Symbol
VRRM
VRSM
IF(RMS)
IFRM
IFSM
Tstg
Tj
Parameter
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
TO-220AC/ D2PAK
TO-220AC Ins.
Repetitive peak forward current
tp = 5 µs F = 5kHz square
Surge non repetitive forward current tp = 10ms sinusoidal
Storage temperature range
Maximum operating junction temperature
Value
1200
1200
30
20
110
70
- 65 to + 150
150
Unit
V
V
A
A
A
A
°C
°C
TURBOSWITCH is a trademark of STMicroelectronics.
November 1999 - Ed: 4C
1/10


STMicroelectronics Electronic Components Datasheet

STTA812 Datasheet

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

No Preview Available !

STTA812D/DI/G
THERMAL AND POWER DATA
Symbol
Rth(j-c)
P1
Pmax
Parameter
Junction to case thermal
resistance
Conduction power dissipation
IF(AV) = 8A δ =0.5
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
Conditions
TO-220AC/D2PAK
TO-220AC Ins.
TO-220AC/D2PAK Tc= 105°C
TO-220AC Ins. Tc= 85°C
TO-220AC/D2PAK Tc= 100°C
TO-220AC Ins. Tc= 79°C
Value
2.3
3.3
19.5
Unit
°C/W
W
21.5 W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VF * Forward voltage drop
IR ** Reverse leakage current
Vto Threshold voltage
rd Dynamic parameter
Test pulses : * tp = 380 µs, δ < 2%
** tp = 5 ms , δ < 2%
Test conditions
IF =8A
Tj = 25°C
Tj = 125°C
VR =0.8 x
VRRM
Tj = 25°C
Tj = 125°C
Ip < 3.IAV Tj = 125°C
Min
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
trr Reverse recovery
time
IRM Maximum reverse
recovery current
S factor Softness factor
Test conditions
Tj = 25°C
IF = 0.5 A IR = 1A Irr = 0.25A
IF = 1 A dIF/dt =-50A/µs VR =30V
Tj = 125°C VR = 600V IF =8A
dIF/dt = -64 A/µs
dIF/dt = -500 A/µs
Tj = 125°C VR = 600V IF =8A
dIF/dt = -500 A/µs
Min
Typ
1.35
0.6
Typ
50
25
1.2
Max
2.2
2.0
100
4
1.57
54
Max
100
12
Unit
V
V
µA
mA
V
m
Unit
ns
A
-
TURN-ON SWITCHING
Symbol
Parameter
tfr Forward recovery time
VFp Peak forward voltage
2/10
Test conditions
Min Typ Max Unit
Tj = 25°C
IF =8 A, dIF/dt = 64 A/µs
measured at 1.1 × VFmax
ns
900
Tj = 25°C
IF =8A, dIF/dt = 64 A/µs
IF =40A, dIF/dt = 500 A/µs
35
45
V


Part Number STTA812
Description TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
Maker ST Microelectronics
Total Page 10 Pages
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