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STMicroelectronics Electronic Components Datasheet

STTA9012TV1 Datasheet

ULTRA-FAST HIGH VOLTAGE DIODE

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® STTA9012TV1/2
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
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IF(AV)
VRRM
trr (typ)
VF (max)
2 x 45A
1200V
65ns
1.85V
K2 A2
K1 A1
STTA9012TV1
A2 K1
K2 A1
STTA9012TV2
FEATURES AND BENEFITS
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY.
LOW INDUCTANCE PACKAGE < 5 nH.
INSULATED PACKAGE :
Electrical insulation : 2500VRMS
Capacitance : < 45pF.
ISOTOPTM
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operationswhich require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all ”freewheel
mode” operations.
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
VRRM
VRSM
IF(RMS)
IFRM
IFSM
Tstg
Tj
Parameter
Repetitive peak reverse voltage
Non repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current
tp = 5 µs F = 5kHz square
Surge non repetitive forward current tp = 10ms sinusoidal
Storage temperature range
Maximum operating junction temperature
Value
1200
1200
150
700
420
- 65 to + 150
150
Unit
V
V
A
A
A
°C
°C
ISOTOP and TURBOSWITCH are trademarks of STMicroelectronics.
November1999 - Ed: 6B
1/8


STMicroelectronics Electronic Components Datasheet

STTA9012TV1 Datasheet

ULTRA-FAST HIGH VOLTAGE DIODE

No Preview Available !

STTA9012TV1/2
THERMAL AND POWER DATA (per diode)
Symbol
Parameter
Rth(j-c) Junction to case thermal resistance
P1 Conduction power dissipation
Pmax
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Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
Test conditions
Per diode
Total
Coupling
IF(AV) = 45A δ =0.5
Tc= 70°C
Tc= 62°C
Value
0.85
0.48
0.1
94
104
Unit
°C/W
W
W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameter
VF * Forward voltage drop
IR ** Reverse leakage current
Vto Threshold voltage
Rd Dynamic resistance
Test pulses : * tp = 380 µs, δ < 2%
** tp = 5 ms , δ < 2%
Test conditions
IF =45A Tj = 25°C
Tj = 125°C
VR =0.8 x Tj = 25°C
VRRM
Tj = 125°C
Ip < 3.IAV Tj = 125°C
Min Typ Max Unit
2.05
1.3 1.85
V
200 µA
3 12 mA
1.57 V
6 m
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
Symbol
Parameter
trr Reverse recovery
time
IRM Maximum reverse
recovery current
S factor Softness factor
Test conditions
Min Typ Max Unit
Tj = 25°C
IF = 0.5 A IR = 1A Irr = 0.25A
IF = 1 A dIF/dt =-50A/µs VR =30V
ns
65
115
Tj = 125°C VR = 600V IF =45A
dIF/dt = -360 A/µs
dIF/dt = -500 A/µs
60
50
A
Tj = 125°C VR = 600V IF =45A
dIF/dt = -500 A/µs
1.2
-
TURN-ON SWITCHING
Symbol
Parameter
tfr Forward recovery time
VFp Peak forward voltage
Test conditions
Min Typ Max Unit
Tj = 25°C
IF =45 A, dIF/dt = 360 A/µs
measured at 1.1 × VFmax
ns
900
Tj = 25°C
IF =45A, dIF/dt = 360 A/µs
IF =45A, dIF/dt = 500 A/µs
30
30
V
2/8


Part Number STTA9012TV1
Description ULTRA-FAST HIGH VOLTAGE DIODE
Maker STMicroelectronics
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STTA9012TV1 Datasheet PDF






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