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STTH1302CT Datasheet HIGH EFFICIENCY ULTRAFAST DIODE

Manufacturer: STMicroelectronics

Download the STTH1302CT datasheet PDF. This datasheet also includes the STTH1302xxx variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STTH1302xxx_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

Dual center tap rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters.

This device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

A1 K A2 K A2 A1K TO-220AB STTH1302CT K A2 A1 D2PAK STTH1302CG A2 K A1 TO-220FPAB STTH1302CFP ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current δ = 0.5 TO-220AB / D2PAK Tc = 155°C Per diode Tc = 145°C Per device TO-220FPAB Tc = 135°C Per diode Tc = 110°C Per device Surge non repetitive forward current tp = 10 ms sinusoïdal Storage temperature range Maximum operating junction temperature Value Unit 200 V 20 A 6.5 A 13 6.5 A 13 70 A - 65 to + 175 °C 175 °C October 2003 - Ed: 2A 1/7 STTH1302CT/CG/CFP THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Rth (c) Coupling Parameter TO-220AB / D2PAK TO-220FPAB TO-220AB / D2PAK TO-220FPAB TO-220AB / D2PAK TO-220FPAB Per diode Total Value 3 5.5 1.9 4.5 0.8 3.5 When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Unit °C/W °C/W °C/W STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF** Parameter Reverse leakage Current Forward Voltage drop Tests Conditions Tj = 25°C VR = VRRM Tj = 125°C Tj = 25°C IF = 6.5 A Tj = 125°C IF = 6.5 A Tj = 25°C IF = 13 A Tj = 125°C IF = 13 A Pulse test : * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the conduction

Overview

® STTH1302CT/CG/CFP HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) 2 x 6.5 A 200 V 175 °C VF (max) trr (max) 0.

Key Features

  • s Suited for SMPS s Low losses s Low forward and reverse recovery times s High surge current capability s High junction temperature s Insulated package: TO-220FPAB: Insulation voltage = 2000 VDC Capacitance = 12 pF.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
ST Microelectronics Logo STTH1302xxx HIGH EFFICIENCY ULTRAFAST DIODE ST Microelectronics

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