STMicroelectronics STTH2R02AY
The STTH2R02AY is based on ST´s 200 V planar Pt doping technology. This is leading to best in class VF/QRR performances, especially in high temperature environment.| Part No. | STTH2R02AY |
|---|---|
| Datasheet | STTH2R02AY Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive 200V 2A ultrafast diode |
| Buy | Stock & Price |
FEATURES
● AEC-Q101 qualified● Very low conduction losses
● Negligible switching losses
● Low forward and reverse recovery times
● High junction temperature
● PPAP capable
● ECOPACK2 compliant
APPLICATIONS
● DC/DC converter● Reverse polarity protection
● LED Lighting
● Injection system
DESCRIPTION
Packaged in SMA package, this device is particularly suitable for high frequency operations in automotive applications. DS13660 - Rev 1 - February 2021 For further information contact your local STMicroelectronics sales office. STTH2R02AY Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage (Tj = -40 °C to +175 °C) Forward rms current Average forward current δ = 0.5, square wave Surge non repetitive forward current Storage temperature range Maximum operating junction temperature TL = 119 °C tp = 10 ms sinusoidal Value Unit 200 V 60 A 2 A 62 A -65 to +175 °C +175 °C Symbol Rth(j-l) Table 2.
