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STTH4R02-Y Automotive ultrafast recovery diode

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Description

STTH4R02-Y Automotive ultrafast recovery diode Datasheet - production data K A K SMB A A K SMC K NC A DPAK .
This device uses ST's new 200 V planar Pt doping technology, and it is especially suited for switching mode base drive and transistor circuits.

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Features

* Very low conduction losses
* Negligible switching losses
* Low forward and reverse recovery times
* High junction temperature
* PPAP capable

Applications

* Table 1: Device summary Symbol Value IF(AV) VRRM Tj (max. ) VF (typ. ) trr (typ. ) 4A 200 V 175 °C 0.76 V 16 ns April 2016 DocID17391 Rev 2 This is information on a product in full production. 1/14 www. st. com Characteristics STTH4R02-Y 1 Characteristics Table 2: Absolute ratings (limitin

STTH4R02-Y Distributors

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STTH4R02-Y Automotive ultrafast recovery diode STMicroelectronics
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