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STMicroelectronics Electronic Components Datasheet

STTH6012 Datasheet

Ultrafast recovery

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STTH6012
Ultrafast recovery - 1200 V diode
Main product characteristics
IF(AV)
VRRM
Tj
VF (typ)
trr (typ)
60 A
1200 V
175° C
1.30 V
50 ns
Features and benefits
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
AK
A
K
DO-247
STTH6012W
Order codes
Part Number
STTH6012W
Marking
STTH6012W
March 2006
Rev 1
www.st.com
1/8
8


STMicroelectronics Electronic Components Datasheet

STTH6012 Datasheet

Ultrafast recovery

No Preview Available !

Characteristics
1 Characteristics
STTH6012
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Symbol
Parameter
Value
VRRM
IF(RMS)
IF(AV)
IFRM
IFSM
Tstg
Tj
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Tc = 90° C
Repetitive peak forward current
tp = 5 µs, F = 5 kHz square
Surge non repetitive forward current tp = 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
1200
80
60
500
400
-65 to + 175
175
Unit
V
A
A
A
A
°C
°C
Table 2. Thermal parameter
Symbol
Parameter
Rth(j-c)
Junction to case
Value
0.6
Unit
°C/W
Table 3. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ Max. Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
Tj = 25° C
Tj = 125° C
Tj = 25° C
Tj = 125° C
Tj = 150° C
VR = VRRM
IF = 60 A
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation:
P = 1.50 x IF(AV) + 0.0075 IF2(RMS)
30
30 300
2.25
1.35 2.05
1.30 1.95
µA
V
2/8


Part Number STTH6012
Description Ultrafast recovery
Maker STMicroelectronics
Total Page 8 Pages
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