STTH8S06 Description
ST's STTH8S06 is a state of the art ultrafast recovery diode. By the use of 600 V Pt doping planar technology, this diode will out-perform the power factor corrections circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH8S06, reduces significantly the switching power losses of the MOSFET and thus increases the efficiency of the application.
STTH8S06 Key Features
- Insulation voltage = 1500 V rms
- Package capacitance = 12 pF